Bipolar amplifiers - Chap 5
Ex. 3-4
VA = oo
Rin = (R1 || R2) || rpi2 (A)
Rin = R1 || ((1/gmout + RT)/betat) (B)
Rin = (betat + 1)RE + rpi1 = (betat)(RE + 1/gmou) + rpi1 (C)
Rin = R1 + (R2 || RDEQ) (D)
RDEQ = rpi2(beta + 1) + rpi1
VA < oo
Rout = R1 || Ro,eq1 (A)
Ro,eq1 = (1 + rogm)(RE || rpi2) + ro
Rout = (1 + rogm)(RE || (rpi + RB)) + ro (B)
Rout = (1 + rogm)RDEQ || rpi1 + ro
RDEQ = (1 + rogm)RE / (beta + 1)
Esercizi Svolti e Commentati:
Microelectronics (B. Razavi, Wiley 2014)
Capitolo 5 Bipolar Amplifiers
Parte I
5
Rin = Rin || rpi (A)
Rin = RCB = REF = 1/gm
Rin = Roeq = (1 + gm1 ra) RCB + ra
VA = oo.
Rin = R (beta + 1) + rpi1
R = 1/gm2 || ro2
6e
Rout = RC || ro (A)
Rout = (1 + gm1 ro1) (1/gm2 || ro2) + ro1.
7-9
calcolate bias point
(A) (B) (C) (D) (E) (F)
Is = 6 - 10-10 A
Is = 5 - 10-16 A
beta = 100
VA = oo
VCC = 2.5V.
TRANS-POINTS: VBE, IC, VCE.
A) VBE = VT ln(IC/IS) = VCC - IBRB = VCC - IC RB/β
Assuming VBE = 0.8V => IB = 17 uAIC = 1.7 mA
=> new VBE = 817 mV => IB = 16.8 uAIC = 1.78 mA
VALUE CHASE SO WE END STOP
=> new VBE = 718 mV => IB = 17.8 uAIC = 1.78 mA
VCE = VCC - ICRC = 1.61 V
Q1 FORWARD ACTIVE REGIONVCE > VBE
B) Vx = 2VBEIC1 ~ IE2
VCC - IBRB = Vx = 2VBE = 2VT ln(IC/IS)
IB = (VCC - 2VBE)/RB
1 VBE = 0.8V => IB = 19 uAIC = 0.90 mA
=> VBE = 0.180V => IB = 20 uAIC = 1.0 mA
=> VBE = 0.703V
VBE2 = VBE2 = VBE = 0.703 VVCE1 = VCC - ICRC = VCE2 = 0.494 V
Q1 ABOVE EDGE OF SATURATIONQ2 EDGE OF SATURATION
C) VBE = VCC - IBRB - 0.5V = VT ln(IC/IS)
IB = (VCC - VBE - 0.5V)/RB
=> VBE = 0.8V => IB = 22 uAIC = 2.2 mA
=> VBE = 0.728V => IB = 12.7 uAIC = 1.27 mA
=> VBE ~= 0.703V => IB = 12.9 uAIC = 1.29 mA
VCE = VCC - ICRC - 0.5V = 0.7V
Q1 EDGE OF SATURATIONVBE ~ VCE.
D) VBE = R1/(R1+R2) VCCVCC = VCC - ICRE
IC = IS exp(VBE/VT)
IB << VCC/(R1+R2)
=> VBE = 0.8V => IC = 0.04AIB = 400 uA
=> IB < 50 uA NOT NEGLECT.
THEVENIN EQUIVALENT CIRCUIT
VthEV = R1/(R1+R2) VCCReq = R1 || R2
VBE = VTHEV - IBR eq = VT ln(IC/IS)
IC = IS exp((VTHEV - IBR eq)/VT)
IB = (VTHEV - VT ln(IC/IS)) / (VT/R eq)
ITERATION STARTING FROM A GUESS ON VBE < Vth (VOLTAGE DROP)
VBE = 0,700V => IB = (VTHDEV - VBE) / Req = 41,6 uA
VTHEV = 0,8Req = 10,8K
IC = 4,60 uA
=> VBE = 0,688V => IB = 10,2 uAIC = 10,2 uA
=> VBE = 0,708V => IB = 8,55 uAIC = 8,65 uA
=> VBE = 0,704V => IB = 8,82 uAIC = 882 uA
=> VBE = 0,704V
VCE = VCC - IC RC < 0 Q1
? THE MAIN REASON IS DUE TO THE BASE FUNCTION INDEX EXPONENTIAL FUNCTION SO
IB = (VTHEV - VT ln(IC/IS)) 1/Req.
VBE = VT ln(IC/IS)
e)
VTHEV = 1,6VReq = 9,40K
IC1 = IC2VBE1 = VBE2 = VBE = 0,700V
IB = (VTHEV - 2VBE) / Req = 17,36 uA
IC = 1,736 uA => VBE = 0,721V
IB = 25,12 uA => IC = 2,77 uA => VBE = 0,719V
IB = 23,2 uA => IC = 2,32 uA => VBE = 0,729V
IB = 24,65 uA => IC = 2,465 uA => VBE = 0,730V
IB = 24,30 uA => IC = 2,430 uA => VBE = 0,730V
VCE1 = VCC - IC RC - VCE2 = VCC - IC IC - VBE = 0,585
Q2 EDGEQ1 SATURATION
(F) VTHEV = 1,3VReq = 6,24K
IB = (VTHEV - VBE - 0,5) / Req
VBE = VT ln(IC/IS)
VBE = 0,650 => IB = 20 uA => IC = 2,6 uAVBE = 0,729 => IB = 11 uA => IC = 1,1 uAVBE = 0,710 => IB = 14 uA => IC = 1,4 uAVBE = 0,716 => IB = 13,4 uA => IC = 1,34 uA => VBE = 0,745V
VCE = VCC - IC RC - 0,5 = 0,66 SATURATION.
Vcc = 2.5 V
Rc = 1 kΩRe = 500 ΩR1 = 40 kΩR2 = 20 kΩ
β = 100VA = ∞
(A) Ic = 1 mA => Is?
(B) Edge of sat => Ics?
A) Vx = R2/(R1+R2) Vcc
Ie = (Vx - VBE)/Re = 1/Re (Vcc R2/(R1+R2) - VBE) ≈ Ic [β >> 1]
Vp = Vx - VBE
Ic = 1 mA ≈ Ie => VCE = Vx - Vp = 1.07 - 0.5 = 0.57 V
=> Is ≈ 1.25 · 10-13 A
Ib ≈ 10 uA Ix = 35.7 uA
=> NOT NEGLECTABLE
Vth = R2/(R1+R2) Vcc = 1.42 V
Req = 17 kΩ
Vth = Ib Req + VBE + VRE
Ib = (Vth - VBE - VRE)/Req = Ic/β
VBE = Vth - Ib Req - (β+1) Ic RE = 1.42 V - 0.14 V - 0.565 = 0.715 V
Is = 1.14 · 10-16 A
Vy = Vcc - Ic Rc = 1.5 V => Q1 forward active region.
B) VCE = VBE
VCE = VCC - Ic Rc - Ie Re = Vth - Ib Req - Ie Re
=> Ic Rc + Ic Req/β = Vcc - Vth
Ic = (Vcc - Vth)/(Rc - Req/β) = 1.30 uA
Ib = 13 uA
VBE = 0.592 V => Is ≈ 5 · 10-13
12
VCC = 1.5V
RC = 2 kOhm
VB = 1.5V
Beta = 100
Is = 5 * 10-15
VA = oo
VCE = VCC - IC RC >= 1.5 - IB RB = VBE
RB >= -(VCC - IC RC) + 1.5
Rough
VCE = VCC - IC RC
IC = Beta IB
IB = (1.5 - VBE) / RB
VCE = VCC - Beta (1.5 - VBE) / RB RC >= VBE
VBE = 0.8 V => RB >= 82.25 kOhm.
RB = 92.35 kOhm => VB = 1.5 * VBE / RB = 8.5 uA
IC = 850 uA
VBE = Vt ln IC / Is => IB = 1.5 - VBE / RB = 8.5 uA
VBE = 0.6417
RB => 92 kOhm => RB = 92 kOhm => IB = 9.27 uA
IC = 927 uA
VBE = 0.6418 V => RB = 92 kOhm
VBE = 0.646 -> EDGE.
13.
Av = vout/vin = vx/vi . vout/vx = -gm Rc . rpi/(rpi + Rb) Rc||ro
Rin = rpi + Rb
Rout = Rc||ro
gm = Ic/Vt
rpi = Beta/gm
ro = VA/Ic
14a.
VCC = 3V
R1 = 20k
R2 = 10k
RC = 3k
VA = oo
IC = 0.5 mA
Beta = 100
IS = 5 x 10-15 A
RE = ?
IB = IC/Beta = 5uA
IE approx IC
I1 = 83uA => I1 >> IB
VBQ approx VCC R2/(R1 + R2) - IERE
VCC - ICRC > R2/(R1 + R2) VCC - IBRC
=> RC < (ICRE - VCC + R2/(R1 + R2)VCC)/IC approx 5k
RE = 5 kOhm => VBE =
Vy = 1.5V
Vx = VB = 1V
{ Q1 quiescent active region }
VBE = Vt ln(IC/IS) = 0.633V => RE = (Vx - VBE)/IC = 1.74 kOhm
15)
b = 100 IS = 10-16 A VA = oo
R1 | Q1 ACTIVE MODE.
Vth = R1/(R1 + R2) Vcc
Req = R1R2/(R1 + R2)
VBE = Vth - IBReq =
VCE = Vcc - ICRc > VDth - IC/b Req
VBE = VT ln(IC/IS)
VBE = 0,8 V => IC = 7,9 mA -> IB = 79 uA
VCE > VBE
Vcc - ICRc > R1/(R1 + R2) Vcc - IC R1R2/(R1 + R2)
VBE = VT ln(IC/IS) = VT ln((Vth - VBE)b/Req IS)
ITERATION METHODS.
16
beta1 = beta2 = 100
IS1 = IS2 = 10-5A
VA = oo
VCC = 2,5V
R1 = 10 k
R2 = 15 k
RC = 100
BIAS POINT?
Req = R1||R2 = R1R2/(R1+R2) = 6k.
VTHV = R2/(R1+R2) VCC = 1,5V
IB1 = (VTHV - 2VBE1)/Req
VBE1 = VT ln(IC1/IS1)
IC1 = beta1 IB1
VBE1 = 0,7V => IB1 = 18uA => IC1 = beta1 IB1 = 1,8uA.
=> VBE1 = 0,668V => IB1 = 21uA => IC1 = 2,1uA.
=> VBE1 = 0,681V => IB1 = 23uA => IC1 = 2,30uA.
=> VBE1 = 0,676V => IB1 = 24uA => IC1 = 2,40uA.
=> VBE1 = 0,678V => IB1 = 24uA => IC1 = 2,40uA.
Q1: VBE1 = 0,678V
IB1 = 24uA
IC1 = 2,40uA
VCE1 = VCC - IC1RC - VBE1 = 1,582V
forando active region
gm1 = gm2 = IC/VT = 0,096 S = (40,42?)
rpi1 = rpi2 = beta/gm = 1042 k
Vout/Vin = Vx/Vin x Vout/Vx
Vx/Vthrev = Req + rpi1 + RE(beta+1)
Vout/Vx = -RC/(1/gm1 + RE/(beta+1)) = -RC/(1/gm1 + 1/gm2 + 1/(beta+1))
17.
IS1 = IS2 = IS3 = 5 · 10-17A
β1 = β2 = β3 = 100
VA = ∞.
IC1 = ?IC2 = ?IC3 = ?
VTH = R1/(R1+R2) VCC = 1.2V
Req = R1 || R2 = 6.24 k
IE3 = IE1 + IE2 = 3IC2 ≈ 3Ic2
Itot = (VTH - 2VBE)/Req
IB2 = (VTH - 2VBE)/Req
IC2 = βIB2
VBE2 = 0.5V => IB2 = 32uA => IC2 = 3.2mA
=> VBE2 = 0.724 NOT POSSIBLE NEVER
VB1 = VBC1 + VC1 = VBC1 + VCC - IC1RC = VBE1 + VBE2 = VBE1 + VBE3
= VBE1 + VBE3
VB2 = VBC2 + VC2 = VBC2 + VCC = VBE2 + VE2 = VBE2 + VBE1.
VBE1 + VBE3 = VT [ln IC1/ISE1 + ln IC3/ISE3] = VT [ln IC1 - ln IS1 + ln IC2 - ln IS2]
= VT
18.
VBE = VT ln(IC/IS) = 0,659V
VEB = IBRB
VC = VCC - ICRC
=> VB = VCC - ICRC - IBRB = VCC - ICRC - IC/beta RB
RB = 268,2 kW.
19.
VEB = VX - VB = IBRB
VX = VCC - ICRC
VBE = VT ln(IC/IS)
IB = IC/beta
VCC - ICRC - VBE = ICRB/beta => IC = (VCC - VBE)/(RB/beta + RC)
0 VBE = 0,8V => IC = 9,25uA IB = 0,25uA
=> VBE = 0,714V => IC = 4,47uA IB = 44,7uA
=> VBE = 0,715V => IC = 4,46uA IB = 44,6uA
VC = VCC - ICRC = 1,16V
VBE < VCE => FORWARD ACTIVE REGION.
20.
VCC = 2,5V
RC = 1 kW
RP = 500W
RB if VBC = 200mV
VBE = VT ln(IC/IS)
VBE = VCC - IBRB - IPRE
IP = IB + IC = IE
VBC RB >= ((VCC - VBE)RP - 0,2 RC beta)/((VCC - VBE) + 0,2)
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Esercizi Amplificatori bipolari - Parte II
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Esercizi Amplificatori Bipolari - Parte IV
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Esercizi Amplificatori Bipolari - Parte III
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Esercizi Amplificatori CMOS - Parte I